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| 2SK1169, 2SK1170 Silicon N-Channel MOS FET Application TO-3P High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter 2 1 2 3 1 1. Gate 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SK1169 Symbol VDSS Ratings 450 Unit V -------------------------------------------------------------------------------------- ---------- 2SK1170 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature VGSS ID ID(pulse)* IDR Pch** Tch Tstg ------ 500 30 20 80 20 120 150 -55 to +150 V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at TC = 25 C 2SK1169, 2SK1170 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage 2SK1169 Symbol V(BR)DSS Min 450 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 -------------------------------------------------------------------------------------- -------- 2SK1170 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1169 V(BR)GSS IGSS IDSS ---- 500 30 -- -- V IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- -- -- -- 10 250 A A -------------------------------------------------------------------------------------- -------- 2SK1170 Gate to source cutoff voltage Static Drain to source on state resistance 2SK1169 VGS(off) RDS(on) 2.0 -- -- |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 10 -- -- -- -- -- -- -- -- -- 0.20 0.22 16 2800 780 90 32 115 200 90 1.0 3.0 0.25 0.27 -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V IF = 20 A, VGS = 0 IF = 20 A, VGS = 0, diF/dt = 100 A/s ID = 10 A, VGS = 10 V, RL = 3 ID = 10 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz V --------------------- VDS = 400 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 10 A, VGS = 10 V * -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------- 2SK1170 -------------------- -------------------------------------------------------------------------------------- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time * Pulse Test -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 500 -- ns -------------------------------------------------------------------------------------- 2SK1169, 2SK1170 Power vs. Temperature Derating 100 150 Channel Dissipation Pch (W) 30 Drain Current ID (A) 10 3 1.0 Maximum Safe Operation Area 10 D C PW 10 0 s s 1 = 10 m s 100 m (1 O s pe ra tio n (T Sh C = ot 50 Operation in this area is limited by RDS (on) 0.3 Ta = 25C 1 25 ) C ) 0 50 100 Case Temperature TC (C) 150 0.1 2SK1170 2SK1169 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 50 10 V 20 7V 6V 16 Pulse Test Drain Current ID (A) Typical Transfer Characteristics VDS = 20 V Pulse Test 40 Drain Current ID (A) 30 12 20 5V 8 4 75C -25C TC = 25C 10 VGS = 4 V 0 10 20 30 40 Drain to Source Voltage VDS (V) 50 0 2 4 6 8 10 Gate to Source Voltage VGS (V) 2SK1169, 2SK1170 Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance RDS (on) () 10 Drain to Source Saturation Voltage VDS (on) (V) Pulse Test 5 Static Drain to Source on State Resistance vs. Drain Current 8 2 1.0 0.5 Pulse Test 6 20 A 4 10 A ID = 5 A 0 4 8 12 16 20 VGS = 10 V 15 V 0.2 0.1 0.05 1 2 5 10 20 Drain Current ID (A) 2 50 100 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () Forward Transfer Admittance yfs (S) 1.0 VGS = 10 V Pulse Test 50 Forward Transfer Admittance vs. Drain Current 0.8 20 10 5 2 1.0 0.5 0.2 VDS = 20 V Pulse Test -25C TC = 25C 75C 0.6 ID = 20 A 0.4 10 A 5A 0.2 0 -40 0 40 80 120 Case Temperature TC (C) 160 0.5 1.0 5 2 Drain Current ID (A) 10 20 2SK1169, 2SK1170 Body to Drain Diode Reverse Recovery Time 5,000 Reverse Recovery Time trr (ns) di/dt = 100 A/s, Ta = 25C VGS = 0 Pulse Test 10,000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz 2,000 1,000 500 Ciss Capacitance C (pF) 1,000 Coss 200 100 50 0.5 100 Crss 10 1.0 2 5 10 20 Reverse Drain Current IDR (A) 50 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) VDD = 100 V 250 V 400 V 300 VDS 12 VGS 8 V DD = 400 V 250 V 100 V ID = 20 A 20 Gate to Source Voltage VGS (V) 500 Switching Characteristics Switching Time t (ns) 400 16 200 100 50 tf tr td (off) 200 td (on) 20 10 5 0.5 VGS = 10 V PW = 2 s, duty < 1% 100 4 0 40 80 120 160 Gate Charge Qg (nc) 0 200 1.0 2 5 10 20 Drain Current ID (A) 50 2SK1169, 2SK1170 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) Pulse Test 16 12 8 5 V, 10 V VGS = 0, -10 V 0 0.4 0.8 1.2 1.6 Source to Drain Voltage VSD (V) 2.0 4 Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.2 0.1 1.0 TC = 25C 0.1 0.05 0.02 .01 ulse 0.03 0 ot P 1Sh ch-c (t) = S (t) * ch-c ch-c = 1.04C/W,TC = 25C PDM D = PW T PW T 100 1m 10 m Pulse Width PW (s) 100 m 1 10 0.01 10 2SK1169, 2SK1170 Switching Time Test Circuit Vin Monitor Wavewforms 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 90 % tr 90 % td (off) 10 % 50 Vin = 10 V . VDD = 30 V . td (on) tf |
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